Asset Publisher

Development of compound semiconductors for planetary and astrophysics space missions

Development of compound semiconductors for planetary and astrophysics space missions

Publication date: 16 July 2000

Authors: Owens, A., et al.

Journal: SPIE Proceedings - X-Ray Optics, Instruments, and Missions III, Joachim E. Truemper; Bernd Aschenbach; Eds.
Volume: 4012
Page: 225-236
Year: 2000

Copyright: SPIE

We discuss the observational requirements for future X-ray planetary and astrophysics missions and present preliminary laboratory results from our compound semiconductor program. The detectors used in the tests were simple monolithic devices, which are used in conjunction with a detailed material science and technology development program intended to produce near Fano limited, pixilated hard X-ray detectors. In practical terms, this means producing active arrays, comprised of over 10³ pixels each being of order 100 microns in size, with spectral resolving powers, E/DeltaE > 20 at 10 keV and high quantum efficiencies over the energy range 1 to 200 keV. Four materials are currently under study - GaAs, HgI2, TlBr and CdZnTe. In the cases of GaAs and CdZnTe, the detector energy resolution functions are approaching the Fano limit.

Link to publication
Last Update: Sep 1, 2019 8:46:51 AM
17-Oct-2021 22:00 UT

ShortUrl Portlet

Shortcut URL

https://sci.esa.int/s/AjpYMXW

Images And Videos

Related Publications

Related Links

See Also

Documentation